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| UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300(Max.)(VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A) *High Power Dissipation: PC=30W (Ta=25C) *Complementary to 2SB834 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER *Pb-free plating product number: 2SD880L ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER Maximum Voltages and currents Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Maximum Power Dissipation Total Power Dissipation Maximum Temperature Junction Temperature Range Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PD TOPR TSTG VALUE 60 60 7 3 0.5 30 150 -55 ~ +150 UNIT V V V A A W C C ELECTRICAL CHARACTERISTICS(Ta=25C) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Current gain bandwidth product SYMBOL BVCEO ICBO IEBO VCE(SAT) VBE(ON) hFE fT TEST CONDITIONS IC=50mA,IE=0 VCB=60V,IE=0 VEB=7V,IC=0 IC=3A, IB=300mA VCE=5V, IC=500mA IC=500mA, VCE=5V VCE =5V, IC =500mA MIN. 60 TYP. MAX. 100 100 1 1 300 UNIT V A A V V MHZ 60 3 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R203-013,B UTC 2SD880 CLASSIFICATION of hFE RANK RANGE NPN EPITAXIAL PLANAR TRANSISTOR O 60-120 Y 100-200 GR 150-300 TYPICAL CHARACTERISTICS Ic-Vce POWER DERATING POWER DISSIPATION, P D (WATTS) 3.0 (A) 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 0 2.5 2.0 1.5 C 90 80 70 60 50 40 30 20 COLLECTOR CURRENT, I IB = 10mA 1.0 0.5 TC = 25 1.0 2.0 3.0 4.0 COLLECTOR-EMITTER VOLTAGE, V 5.0 CE (V) 6.0 TEMPERATURE, TC () DC CURRENT GAIN 300 TC = 100 DC CURRENT CAIN, hFE Ic-Vbe VCE = 5.0V COLLECTOR CURRENT, IC (A) 3.0 2.5 2.0 1.5 1.0 0.5 TC = 100 25 -25 VCE = 5.0V 100 25 50 30 -25 10 2 5 10 20 50 100 200 500 1k 3k 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 COLLECTOR CURRENT, IC (mA) BASE-EMITTER VOLTAGE, VBE (V) VCE(sat)-IC COMMON EMITTER 0.5 IC/IB = 10 VOLTAGE, V (VOLTS) ACTIVE-REGION SAFE OPERATING AREA (SOA) 10 COLLECTOR CURRENT, IC (Amp) 1.0 100ms 10ms 1ms dc 5.0 2.0 1.0 0.5 0.2 TC = 100 0.1 0.05 -25 0.02 2 5 10 20 50 25 Bonding Wire Limit Second Breakdown Limit Thermally Limited at TC = 25 (Single Pulse) 0.2 0.1 1.0 100 200 500 1k 2k 3k 2.0 5.0 7.0 10 20 50 70 100 COLLECTOR CURRENT, IC (mA) COLLECTOR EMITTER VOLTAGE, VCE (VOLTS) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R203-013,B UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R203-013,B |
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